MG360V1US41 Toshiba high-power IGBT (Insulated Gate Bipolar Transistor) module. 1700 V | 360 A | Sanghvi Electronics - Mumbai

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MG360V1US41 Toshiba high-power IGBT (Insulated Gate Bipolar Transistor) module. 1700 V | 360 A

MG360V1US41 Toshiba high-power IGBT (Insulated Gate Bipolar Transistor) module. 1700 V | 360 A

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Toshiba MG360V1US41 IGBT module1700V 360A Insulated Gate Bipolar TransistorHigh-power IGBT module Toshiba

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