IXYS MUBW10‑12A6K
power IGBT (Insulated Gate Bipolar Transistor) module
1200 V |
Sanghvi Electronics 2026-03-27T08:42:30 2026-03-27T08:42:30
Sanghvi Electronics 
IXYS MUBW10‑12A6K power IGBT (Insulated Gate Bipolar Transistor) module 1200 V |
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