Sanghvi Electronics 2026-04-11T08:39:09 2026-04-11T08:39:09 Sanghvi Electronics MG360V1US41 Toshiba high-power IGBT (Insulated Gate Bipolar Transistor) module.1700 V | 360 AMG360V1US41 Toshiba high-power IGBT (Insulated Gate Bipolar Transistor) module. 1700 V | 360 A2026-04-11T08:39:09 read more
Sanghvi Electronics 2026-04-11T07:57:26 2026-04-11T07:57:26 Sanghvi Electronics SANREX MDS300-16 three-phase diode bridge rectifier module300 A | 1600 VSANREX MDS300-16 three-phase diode bridge rectifier module 300 A | 1600 V2026-04-11T07:57:26 read more